Influences of the temperature on the electrical properties of HfO2-based resistive switching devices

  1. García, H.
  2. Boo, J.
  3. Vinuesa, G.
  4. Ossorio, Ó.G.
  5. Sahelices, B.
  6. Dueñas, S.
  7. Castán, H.
  8. González, M.B.
  9. Campabadal, F.
Journal:
Electronics (Switzerland)

ISSN: 2079-9292

Year of publication: 2021

Volume: 10

Issue: 22

Type: Article

DOI: 10.3390/ELECTRONICS10222816 GOOGLE SCHOLAR lock_openOpen access editor HANDLE: https://hdl.handle.net/10324/59092

Sustainable development goals

Data source: Scopus