Influences of the temperature on the electrical properties of HfO2-based resistive switching devices

  1. García, H.
  2. Boo, J.
  3. Vinuesa, G.
  4. Ossorio, Ó.G.
  5. Sahelices, B.
  6. Dueñas, S.
  7. Castán, H.
  8. González, M.B.
  9. Campabadal, F.
Aldizkaria:
Electronics (Switzerland)

ISSN: 2079-9292

Argitalpen urtea: 2021

Alea: 10

Zenbakia: 22

Mota: Artikulua

DOI: 10.3390/ELECTRONICS10222816 GOOGLE SCHOLAR lock_openSarbide irekia editor HANDLE: https://hdl.handle.net/10324/59092

Garapen Iraunkorreko Helburuak

Datuen iturria: Scopus