Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices

  1. Vinuesa, G.
  2. Ossorio, O.G.
  3. García, H.
  4. Sahelices, B.
  5. Castán, H.
  6. Dueñas, S.
  7. Kull, M.
  8. Tarre, A.
  9. Jogiaas, T.
  10. Tamm, A.
  11. Kasikov, A.
  12. Kukli, K.
Revista:
Solid-State Electronics

ISSN: 0038-1101

Any de publicació: 2021

Volum: 183

Tipus: Article

DOI: 10.1016/J.SSE.2021.108085 GOOGLE SCHOLAR

Objectius de Desenvolupament Sostenible