Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices
- Vinuesa, G.
- Ossorio, O.G.
- García, H.
- Sahelices, B.
- Castán, H.
- Dueñas, S.
- Kull, M.
- Tarre, A.
- Jogiaas, T.
- Tamm, A.
- Kasikov, A.
- Kukli, K.
Journal:
Solid-State Electronics
ISSN: 0038-1101
Year of publication: 2021
Volume: 183
Type: Article