Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices

  1. Vinuesa, G.
  2. Ossorio, O.G.
  3. García, H.
  4. Sahelices, B.
  5. Castán, H.
  6. Dueñas, S.
  7. Kull, M.
  8. Tarre, A.
  9. Jogiaas, T.
  10. Tamm, A.
  11. Kasikov, A.
  12. Kukli, K.
Journal:
Solid-State Electronics

ISSN: 0038-1101

Year of publication: 2021

Volume: 183

Type: Article

DOI: 10.1016/J.SSE.2021.108085 GOOGLE SCHOLAR

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