Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices

  1. Vinuesa, G.
  2. Ossorio, O.G.
  3. García, H.
  4. Sahelices, B.
  5. Castán, H.
  6. Dueñas, S.
  7. Kull, M.
  8. Tarre, A.
  9. Jogiaas, T.
  10. Tamm, A.
  11. Kasikov, A.
  12. Kukli, K.
Aldizkaria:
Solid-State Electronics

ISSN: 0038-1101

Argitalpen urtea: 2021

Alea: 183

Mota: Artikulua

DOI: 10.1016/J.SSE.2021.108085 GOOGLE SCHOLAR

Garapen Iraunkorreko Helburuak