RUTH
PINACHO GOMEZ
PROFESORES TITULARES DE UNIVERSIDAD
MARTIN
JARAIZ MALDONADO
CATEDRATICOS DE UNIVERSIDAD
MARTIN JARAIZ MALDONADO-rekin lankidetzan egindako argitalpenak (32)
2019
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An Efficient Microkinetic Modeling Protocol: Start with only the Dominant Mechanisms, Adjust All Parameters, and Build the Complete Model Incrementally
ACS Catalysis, Vol. 9, Núm. 6, pp. 4804-4809
2018
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Sulfur Hydrogen Bonding in Isolated Monohydrates: Furfuryl Mercaptan versus Furfuryl Alcohol
Chemistry - A European Journal, Vol. 24, Núm. 25, pp. 6564-6571
2017
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A DFT-Based Computational-Experimental Methodology for Synthetic Chemistry: Example of Application to the Catalytic Opening of Epoxides by Titanocene
Journal of Organic Chemistry, Vol. 82, Núm. 7, pp. 3760-3766
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Rotational spectra of tetracyclic quinolizidine alkaloids: Does a water molecule flip sparteine?
Physical Chemistry Chemical Physics, Vol. 19, Núm. 27, pp. 17553-17559
2011
2010
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Atomistic modeling of defect diffusion and interdiffusion in SiGe heterostructures
Thin Solid Films, Vol. 518, Núm. 9, pp. 2448-2453
2008
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Comprehensive model of damage accumulation in silicon
Journal of Applied Physics, Vol. 103, Núm. 1
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The use of extended-defect dissolution as a probe for stress-induced interstitial diffusion anisotropy
Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 154-155, Núm. 1-3, pp. 260-263
2007
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Atomistic modeling of defect diffusion in SiGe
2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007
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Current capabilities and future prospects of atomistic process simulation
Technical Digest - International Electron Devices Meeting, IEDM
2006
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Modeling and simulation of the influence of SOI structure on damage evolution and ultra-shallow junction formed by Ge preamorphization implants and solid phase epitaxial regrowth
Materials Research Society Symposium Proceedings
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Modeling charged defects, dopant diffusion and activation mechanisms for TCAD simulations using kinetic Monte Carlo
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 253, Núm. 1-2, pp. 63-67
2005
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Bimodal distribution of damage morphology generated by ion implantation
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
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Comprehensive modeling of ion-implant amorphization in silicon
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
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Dose loss and segregation of boron and arsenic at the Si/SiO2 interface by atomistic kinetic Monte Carlo simulations
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
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Fermi-level effects in semiconductor processing: A modeling scheme for atomistic kinetic Monte Carlo simulators
Journal of Applied Physics, Vol. 98, Núm. 5
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Ion-beam amorphization of semiconductors: A physical model based on the amorphous pocket population
Journal of Applied Physics, Vol. 98, Núm. 4
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Ion-implant simulations: The effect of defect spatial correlation on damage accumulation
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
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Modeling arsenic deactivation through arsenic-vacancy clusters using an atomistic kinetic Monte Carlo approach
Applied Physics Letters, Vol. 86, Núm. 25, pp. 1-3
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Physical atomistic kinetic Monte Carlo modeling of Fermi-level effects of species diffusing in silicon
Physical Review B - Condensed Matter and Materials Physics, Vol. 72, Núm. 3