RUTH PINACHO GOMEZ-rekin lankidetzan egindako argitalpenak (18)

2005

  1. Bimodal distribution of damage morphology generated by ion implantation

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  2. Comprehensive modeling of ion-implant amorphization in silicon

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  3. Dose loss and segregation of boron and arsenic at the Si/SiO2 interface by atomistic kinetic Monte Carlo simulations

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  4. Fermi-level effects in semiconductor processing: A modeling scheme for atomistic kinetic Monte Carlo simulators

    Journal of Applied Physics, Vol. 98, Núm. 5

  5. Ion-beam amorphization of semiconductors: A physical model based on the amorphous pocket population

    Journal of Applied Physics, Vol. 98, Núm. 4

  6. Ion-implant simulations: The effect of defect spatial correlation on damage accumulation

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  7. Modeling arsenic deactivation through arsenic-vacancy clusters using an atomistic kinetic Monte Carlo approach

    Applied Physics Letters, Vol. 86, Núm. 25, pp. 1-3

  8. Physical atomistic kinetic Monte Carlo modeling of Fermi-level effects of species diffusing in silicon

    Physical Review B - Condensed Matter and Materials Physics, Vol. 72, Núm. 3

  9. Physically based modeling of dislocation loops in ion implantation processing in silicon

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

2004

  1. A kinetic Monte Carlo annealing assessment of the dominant features from ion implant simulations

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  2. Comprehensive, physically based modelling of As in Si

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  3. Ion implant simulations: Kinetic Monte Carlo annealing assessment of the dominant features

    Applied Physics Letters, Vol. 84, Núm. 24, pp. 4962-4964

  4. Physical modeling of Fermi-level effects for decanano device process simulations

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  5. Physically based modelling of damage, amorphization, and recrystallization for predictive device-size process simulation

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

2003

  1. Mobile silicon di-interstitial: Surface, self-interstitial clustering, and transient enhanced diffusion phenomena

    Physical Review B - Condensed Matter and Materials Physics, Vol. 68, Núm. 19

2002

  1. Carbon in silicon: Modeling of diffusion and clustering mechanisms

    Journal of Applied Physics, Vol. 92, Núm. 3, pp. 1582-1587