Electricidad y Electrónica

2005

1. A 2D-TLM model for electromagnetic wave propagation in chiral media

   Microwave and Optical Technology Letters, Vol. 46, Núm. 2, pp. 180-182

2. A comparative study of the electrical properties of TiO2 films grown by high-pressure reactive sputtering and atomic layer deposition

   Semiconductor Science and Technology, Vol. 20, Núm. 10, pp. 1044-1051

3. Atomistic analysis of the evolution of boron activation during annealing in crystalline and preamorphized silicon

   Journal of Applied Physics, Vol. 97, Núm. 10

4. Comparative study on electrical properties of atomic layer deposited high-permittivity materials on silicon substrates

   Thin Solid Films, Vol. 474, Núm. 1-2, pp. 222-229

5. Determination of the characteristic parameters of single and multi-exponential magnetic relaxation processes

   Journal of Electrical Engineering, Vol. 55, Núm. 10 SUPPL, pp. 109-111

6. Fermi-level effects in semiconductor processing: A modeling scheme for atomistic kinetic Monte Carlo simulators

   Journal of Applied Physics, Vol. 98, Núm. 5

7. Ion-beam amorphization of semiconductors: A physical model based on the amorphous pocket population

   Journal of Applied Physics, Vol. 98, Núm. 4

8. Modeling arsenic deactivation through arsenic-vacancy clusters using an atomistic kinetic Monte Carlo approach

   Applied Physics Letters, Vol. 86, Núm. 25, pp. 1-3

9. Molecular dynamics study of the configurational and energetic properties of the silicon self-interstitial

   Physical Review B - Condensed Matter and Materials Physics, Vol. 71, Núm. 8

10. Nonlinearity correction for multibit ΔΣ DACs

    IEEE Transactions on Circuits and Systems I: Regular Papers, Vol. 52, Núm. 6, pp. 1033-1041

11. PML absorbing boundary conditions for the multiresolution time-domain techniques based on the discrete wavelet transform

    Applied Computational Electromagnetics Society Journal, Vol. 20, Núm. 3, pp. 207-211

12. Physical atomistic kinetic Monte Carlo modeling of Fermi-level effects of species diffusing in silicon

    Physical Review B - Condensed Matter and Materials Physics, Vol. 72, Núm. 3

13. Role of silicon interstitials in boron cluster dissolution

    Applied Physics Letters, Vol. 86, Núm. 3, pp. 1-3

14. TLM simulation of electromagnetic wave propagation in anisotropic moving media

    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, Vol. 18, Núm. 3, pp. 227-236

15. Two-dimensional extension of a novel FDTD technique for modeling dispersive lossy bi-isotropic media using the auxiliary differential equation method

    IEEE Microwave and Wireless Components Letters, Vol. 15, Núm. 5, pp. 375-377