Interfacial State Density and Conductance-Transient Three-Dimensional Profiling of Disordered-Induced Gap States on Metal Insulator Semiconductor Capacitors Fabricated from Electron Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposited SiOxNyHz Films
- Castán, H.
- Dueñas, S.
- Barbolla, J.
- Del Prado, Á.
- Mártil, I.
- González-Díaz, G.
ISSN: 0021-4922
Datum der Publikation: 2003
Ausgabe: 42
Nummer: 8
Seiten: 4978-4981
Art: Artikel