Electrical characterization of electron cyclotron resonance deposited silicon nitride dual layer for enhanced AI/SiNx:H/InP metal-insulator-semiconductor structures fabrication

  1. Peláez, R.
  2. Castán, E.
  3. Dueñas, S.
  4. Barbolla, J.
  5. Redondo, E.
  6. Mártil, I.
  7. González-Díaz, G.
Journal:
Journal of Applied Physics

ISSN: 0021-8979

Year of publication: 1999

Volume: 86

Issue: 12

Pages: 6924-6930

Type: Article

DOI: 10.1063/1.371774 GOOGLE SCHOLAR

Sustainable development goals

Data source: Scopus