Interface quality of Sc2O3 and Gd2O 3 films based metal-insulator-silicon structures using Al, Pt, and Ti gates: Effect of buffer layers and scavenging electrodes

  1. Gómez, A.
  2. Castán, H.
  3. García, H.
  4. Dueñas, S.
  5. Bailón, L.
  6. Pampillón, M.A.
  7. Feijoo, P.C.
  8. San Andrés, E.
Revista:
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

ISSN: 2166-2754,  2166-2746

Any de publicació: 2013

Volum: 31

Número: 1

Tipus: Article

DOI: 10.1116/1.4768678 GOOGLE SCHOLAR
Font de les dades: Scopus