Atomistic study of the anisotropic interaction between extended and point defects in crystalline silicon and its influence on Si self-interstitial diffusion

  1. Santos, I.
  2. Aboy, M.
  3. Marques, L.A.
  4. Lopez, P.
  5. Ruiz, M.
  6. Pelaz, L.
  7. Hernandez-Diaz, A.M.
  8. Castrillo, P.
Proceedings:
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

ISBN: 9781509008179

Year of publication: 2016

Pages: 35-37

Type: Conference paper

DOI: 10.1109/SISPAD.2016.7605142 GOOGLE SCHOLAR lock_openUVADOC editor

Related Projects

EXPLORACIÓN MEDIANTE MODELADO DE ESTRATEGIAS DE INGENIERÍA DE DEFECTOS EN ESTRUCTURAS SEMICONDUCTORAS

2014/00426/001

Data source: Scopus