Thermal emission rates and capture cross-section of majority carriers at titanium levels in silicon

  1. Morante, J.R.
  2. Carceller, J.E.
  3. Cartujo, P.
  4. Barbolla, J.
Revue:
Solid State Electronics

ISSN: 0038-1101

Année de publication: 1983

Volumen: 26

Número: 1

Pages: 1-6

Type: Article

DOI: 10.1016/0038-1101(83)90153-3 GOOGLE SCHOLAR

Objectifs de Développement Durable