Ion mass influence on transient enhanced diffusion and boron clustering in silicon: Deviation from the "+1" model

  1. Herner, S.B.
  2. Gossmann, H.-J.
  3. Pelaz, L.P.
  4. Gilmer, G.H.
  5. Jaraíz, M.
  6. Jacobson, D.C.
  7. Eaglesham, D.J.
Journal:
Journal of Applied Physics

ISSN: 0021-8979

Year of publication: 1998

Volume: 83

Issue: 11

Pages: 6182-6184

Type: Article

DOI: 10.1063/1.367489 GOOGLE SCHOLAR