Enhanced low temperature electrical activation of B in Si

  1. Kalyanaraman, R.
  2. Venezia, V.C.
  3. Pelaz, L.
  4. Haynes, T.E.
  5. Gossmann, H.-J.L.
  6. Rafferty, C.S.
Revue:
Applied Physics Letters

ISSN: 0003-6951

Année de publication: 2003

Volumen: 82

Número: 2

Pages: 215-217

Type: Article

DOI: 10.1063/1.1535270 GOOGLE SCHOLAR