Physically based modeling of dislocation loops in ion implantation processing in silicon

  1. Castrillo, P.
  2. Martin-Bragado, I.
  3. Pinacho, R.
  4. Jaraiz, M.
  5. Rubio, J.E.
  6. Mok, K.R.C.
  7. Miguel-Herrero, F.J.
  8. Barbolla, J.
Journal:
Materials Science and Engineering B: Solid-State Materials for Advanced Technology

ISSN: 0921-5107

Year of publication: 2005

Volume: 124-125

Issue: SUPPL.

Pages: 404-408

Type: Conference paper

DOI: 10.1016/J.MSEB.2005.08.119 GOOGLE SCHOLAR

Sustainable development goals

Data source: Scopus