Self-trapping in B-doped amorphous Si: Intrinsic origin of low acceptor efficiency

  1. Santos, I.
  2. Castrillo, P.
  3. Windl, W.
  4. Drabold, D.A.
  5. Pelaz, L.
  6. Marqués, L.A.
Journal:
Physical Review B - Condensed Matter and Materials Physics

ISSN: 1098-0121,  1550-235X

Year of publication: 2010

Volume: 81

Issue: 3

Type: Article

DOI: 10.1103/PHYSREVB.81.033203 GOOGLE SCHOLAR lock_openUVADOC editor

Sustainable development goals

Data source: Scopus