Evidence of chlorine ion penetration in InP/InAsP quantum well structures during dry etching processes and effects of induced-defects on the electronic and structural behaviour

1. Landesman, J.P.
2. Levallois, C.
3. Jiménez, J.
4. Pommereau, F.
5. Léger, Y.
6. Beck, A.
7. Delhaye, T.
8. Torres, A.
9. Frigeri, C.
10. Rhallabi, A.