Analysis of the performance of Nb2O5-doped SiO2-based MIM devices for memory and neural computation applications

  1. Ossorio, Ó.G.
  2. Vinuesa, G.
  3. García, H.
  4. Sahelices, B.
  5. Dueñas, S.
  6. Castán, H.
  7. Ritala, M.
  8. Leskelaˇ, M.
  9. Kemell, M.
  10. Kukli, K.
Revista:
Solid-State Electronics

ISSN: 0038-1101

Any de publicació: 2021

Volum: 186

Tipus: Article

DOI: 10.1016/J.SSE.2021.108114 GOOGLE SCHOLAR
Font de les dades: Scopus