Controlling the intermediate conductance states in RRAM devices for synaptic applications

  1. García, H.
  2. Ossorio, O.G.
  3. Dueñas, S.
  4. Castán, H.
Revue:
Microelectronic Engineering

ISSN: 0167-9317

Année de publication: 2019

Volumen: 215

Type: Article

DOI: 10.1016/J.MEE.2019.110984 GOOGLE SCHOLAR lock_openUVADOC editor
La source de données: Scopus