Study of the admittance hysteresis cycles in TiN/Ti/HfO2/W-based RRAM devices

  1. Dueñas, S.
  2. Castán, H.
  3. García, H.
  4. Miranda, E.
  5. Gonzalez, M.B.
  6. Campabadal, F.
Revue:
Microelectronic Engineering

ISSN: 0167-9317

Année de publication: 2017

Volumen: 178

Pages: 30-33

Type: Article

DOI: 10.1016/J.MEE.2017.04.020 GOOGLE SCHOLAR
La source de données: Scopus