Atomistic model of transient enhanced diffusion and clustering of boron in silicon

  1. Pelaz, L.
  2. Gilmer, G.H.
  3. Jaraiz, M.
  4. Gossmann, H.-J.
  5. Rafferty, C.S.
  6. Eaglesham, D.J.
  7. Poate, J.M.
Proceedings:
Materials Research Society Symposium - Proceedings

ISSN: 0272-9172

Year of publication: 1997

Volume: 469

Pages: 341-346

Type: Conference paper

DOI: 10.1557/PROC-469-341 GOOGLE SCHOLAR