Study of TiN/Ti/HfO2/W resistive switching devices: characterization and modeling of the set and reset transitions using an external capacitor discharge

  1. García, H.
  2. Jiménez-Molinos, F.
  3. Vinuesa, G.
  4. González, M.B.
  5. Roldán, J.B.
  6. Miranda, E.
  7. Campabadal, F.
  8. Castán, H.
  9. Dueñas, S.
Revue:
Solid-State Electronics

ISSN: 0038-1101

Année de publication: 2022

Volumen: 194

Type: Article

DOI: 10.1016/J.SSE.2022.108385 GOOGLE SCHOLAR lock_openUVADOC editor

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