Electrical study of ScO-based MIS structures using Al and Ti as gate electrodes

  1. H. García
  2. H. Castán
  3. S. Dueñas
  4. L. Bailón
  5. P.C. Feijoo
  6. M.A. Pampillón
  7. E. San Andrés
Llibre:
Proceedings of the 2013 Spanish Conference on Electron Devices
  1. Héctor García
  2. Helena Castán

Editorial: Universidad de Valladolid

ISBN: 9781467346665

Any de publicació: 2013

Tipus: Capítol de llibre

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Resum

The electrical properties of ScO-based MIS structures have been electrically studied. The high-k films were deposited by high pressure sputtering (HPS). Aluminum and Ti were used as gate electrodes. Defects inside the oxide seem to be reduced when increasing the chamber pressure. However, leakage current density increases in this case.

Fuente de los datos: Dialnet