Conductance transient comparative analysis of ECR-PECVD deposited SiN<sub>x</sub>, SiO<sub>2</sub>/SiN<sub>x</sub> and SiO<sub>x</sub>N<sub>y</sub> dielectric films on silicon substrates

  1. Castán, H. 1
  2. Dueñas, S. 1
  3. Barbolla, J. 1
  4. Del Prado, A. 2
  5. San Andrés, E. 2
  6. Mártil, I. 2
  7. González-Díaz, G. 2
  1. 1 Departamento de Electricidad, E.T.S.I. Telecomunicación, Universidad de Valladolid
  2. 2 Depto. de Física Aplicada III, Facultad de Ciencias Físicas, Universidad Complutense
Revista:
MRS Proceedings

ISSN: 0272-9172,  1946-4274

Año de publicación: 2003

Volumen: 786

Tipo: Artículo

DOI: 10.1557/PROC-786-E3.12 GOOGLE SCHOLAR lock_openAcceso abierto editor

Otras publicaciones en: MRS Proceedings

Resumen

A study of metal-insulator-semiconductor (MIS) structures based on SiNx, SiO2/SiNx and SiOxNy films deposited on silicon by electron cyclotron resonance plasma-enhanced chemical vapour deposition (ECR-PECVD) is presented. Interface trap densities measured by deep level transient spectroscopy (DLTS) are higher for silicon oxynitride-based MIS capacitors than for silicon nitride and silicon oxide-silicon nitride-based ones. However, conductance transient analysis demonstrated that Al/SiNx/Si devices exhibit the highest disordered-induced gap states (DIGS) density, whereas the lowest one corresponds to Al/SiNx/SiO2/Si, and silicon oynitride-based MIS capacitors show an intermediate behaviour. In addition, thermal treatments applied to Al/SiOxNy/Si samples reduce DIGS densities to values even lower than those corresponding to Al/SiNx/SiO2/Si devices.

Referencias bibliográficas

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