GERMAN DIAZ GONZALEZ-rekin lankidetzan egindako argitalpenak (4)

1999

  1. Electrical characterization of ECR enhaced deposited silicon nitride bilayers for high quality Al/SiNx/InP MIS structure fabrication

    Journal of Materials Science: Materials in Electronics, Vol. 10, Núm. 5, pp. 373-377

1998

  1. Electrical characterization of deep levels existing in Mg-Si- and Mg-P-Si-implanted p+n InP junctions

    Semiconductor Science and Technology, Vol. 13, Núm. 4, pp. 389-393

1997

  1. Deep levels in p+-n junctions fabricated by rapid thermal annealing of Mg or Mg/P implanted InP

    Journal of Applied Physics, Vol. 81, Núm. 7, pp. 3143-3150

  2. Experimental observation of conductance transients in Al/SiNx:H/Si metal-insulator-semiconductor structures

    Applied Physics Letters, Vol. 71, Núm. 6, pp. 826-828