MIGUEL ANGEL
GONZALEZ REBOLLO
CATEDRATICOS DE UNIVERSIDAD
University of Montpellier
Montpellier, FranciaPublicaciones en colaboración con investigadores/as de University of Montpellier (9)
1993
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A comparison of the thermal and near band-gap light-induced recoveries of EL2 from its metastable state in semiinsulating GaAs
Journal of Applied Physics, Vol. 73, Núm. 10, pp. 5004-5008
1989
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0.8 eV excitation of the quenched EL2* level in semi-insulating GaAs
Journal of Applied Physics, Vol. 66, Núm. 5, pp. 2221-2222
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Optical recovery of the 1-1.3 eV photocurrent by 1.45eV photons in semiinsulating GaAs
Solid State Communications, Vol. 72, Núm. 8, pp. 781-783
1988
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Optical quenching of the extrinsic light induced enhanced photocurrent in semi-insulating GaAs
Japanese Journal of Applied Physics, Vol. 27, Núm. 10 R, pp. 1841-1844
1987
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Photo-Hall study of the optically enhanced photocurrent in semi-insulating LEC GaAs
Solid State Communications, Vol. 63, Núm. 10, pp. 937-940
1986
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Photoconductivity Properties of Vanadium Doped Bulk GaAs
physica status solidi (a), Vol. 96, Núm. 2, pp. K207-K212
1985
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Optically enhanced defect reactions in semi-insulating bulk GaAs
Journal of Applied Physics, Vol. 57, Núm. 4, pp. 1152-1160
1984
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A study on the photoconductivity of a set of horizontal Bridgman semi-insulating GaAs ingots
Journal of Materials Science, Vol. 19, Núm. 4, pp. 1207-1219
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Optical photogenerated traps in semi-insulating GaAs bulk material
Physica Scripta, Vol. 30, Núm. 3, pp. 198-200