Publications in collaboration with researchers from Instituto de Microelectrónica de Madrid (14)

1997

  1. Growth and characterization of (InSb)m(InP)n short period superlattices

    Applied Physics Letters, Vol. 70, Núm. 22, pp. 3017-3019

  2. Optical phonons of strained GaAs/GaP quantum wells studied by Raman spectroscopy

    Applied Physics Letters, Vol. 71, Núm. 10, pp. 1353-1355

  3. Optical studies of GaAs quantum wells strained to GaP

    Applied Physics Letters, Vol. 70, Núm. 25, pp. 3449-3451

  4. Spectroscopy, imaging and switching behaviour of individual InP/GaInP quantum dots

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 36, Núm. 6 SUPPL. B, pp. 4188-4190

1996

  1. Consequences of interface corrugation on the lattice dynamics and raman spectra in high-index AlAs/GaAs superlattices

    Solid-State Electronics, Vol. 40, Núm. 1-8, pp. 175-180

  2. Raman response of (11N)-oriented GaAs/AlAs superlattices within the framework of the bond polarizability model

    Solid State Communications, Vol. 98, Núm. 4, pp. 307-311

1995

  1. Interface structure of GaAs/AlAs superlattices grown on (113) surfaces: Raman scattering studies

    Solid State Communications, Vol. 94, Núm. 8, pp. 613-617

  2. Phonon properties and Raman response of (113) GaAs/AlAs corrugated superlattices

    Physical Review B, Vol. 51, Núm. 3, pp. 1647-1652

1994

  1. Enhancement of the Pockels component in the electroreflectance spectra of quantum wells

    Physical Review B, Vol. 49, Núm. 24, pp. 17444-17447

  2. Lattice dynamics and Raman response of (113) GaAs/AlAs superlattices

    Physical Review B, Vol. 49, Núm. 15, pp. 10362-10372

  3. Optical anisotropy of (113)-oriented GaAs/AlAs superlattices

    Physical Review B, Vol. 49, Núm. 19, pp. 14020-14023

1993

  1. Excitons in {311} oriented superlattices: Optical anisotropies

    Journal De Physique. IV : JP, Vol. 3, Núm. 5, pp. 283-286

  2. Growth and characterization of A1As/GaInAs multiple quantum wells

    Journal of Crystal Growth, Vol. 127, Núm. 1-4, pp. 611-615

  3. Piezoelectric-field-induced localization of barrier states in {211}-oriented InAs/GaAs superlattices

    Physical Review B, Vol. 47, Núm. 19, pp. 12945-12948