Publicaciones en colaboración con investigadores/as de Instituto de Microelectrónica de Madrid (14)

1997

  1. Growth and characterization of (InSb)m(InP)n short period superlattices

    Applied Physics Letters, Vol. 70, Núm. 22, pp. 3017-3019

  2. Optical phonons of strained GaAs/GaP quantum wells studied by Raman spectroscopy

    Applied Physics Letters, Vol. 71, Núm. 10, pp. 1353-1355

  3. Optical studies of GaAs quantum wells strained to GaP

    Applied Physics Letters, Vol. 70, Núm. 25, pp. 3449-3451

  4. Spectroscopy, imaging and switching behaviour of individual InP/GaInP quantum dots

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 36, Núm. 6 SUPPL. B, pp. 4188-4190

1996

  1. Consequences of interface corrugation on the lattice dynamics and raman spectra in high-index AlAs/GaAs superlattices

    Solid-State Electronics, Vol. 40, Núm. 1-8, pp. 175-180

  2. Raman response of (11N)-oriented GaAs/AlAs superlattices within the framework of the bond polarizability model

    Solid State Communications, Vol. 98, Núm. 4, pp. 307-311

1995

  1. Interface structure of GaAs/AlAs superlattices grown on (113) surfaces: Raman scattering studies

    Solid State Communications, Vol. 94, Núm. 8, pp. 613-617

  2. Phonon properties and Raman response of (113) GaAs/AlAs corrugated superlattices

    Physical Review B, Vol. 51, Núm. 3, pp. 1647-1652

1994

  1. Enhancement of the Pockels component in the electroreflectance spectra of quantum wells

    Physical Review B, Vol. 49, Núm. 24, pp. 17444-17447

  2. Lattice dynamics and Raman response of (113) GaAs/AlAs superlattices

    Physical Review B, Vol. 49, Núm. 15, pp. 10362-10372

  3. Optical anisotropy of (113)-oriented GaAs/AlAs superlattices

    Physical Review B, Vol. 49, Núm. 19, pp. 14020-14023

1993

  1. Excitons in {311} oriented superlattices: Optical anisotropies

    Journal De Physique. IV : JP, Vol. 3, Núm. 5, pp. 283-286

  2. Growth and characterization of A1As/GaInAs multiple quantum wells

    Journal of Crystal Growth, Vol. 127, Núm. 1-4, pp. 611-615

  3. Piezoelectric-field-induced localization of barrier states in {211}-oriented InAs/GaAs superlattices

    Physical Review B, Vol. 47, Núm. 19, pp. 12945-12948