Publicaciones en colaboración con investigadores/as de University of Montpellier (20)

2002

  1. Gradual degradation in 980 nm InGaAs/AlGaAs pump lasers

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

1994

  1. Temperature dependence of the EL2 metastability in semi-insulating GaAs: Thermal hysteresis between the metastable and reverse transitions

    Physical Review B, Vol. 50, Núm. 19, pp. 14112-14118

1993

  1. A comparison of the thermal and near band-gap light-induced recoveries of EL2 from its metastable state in semiinsulating GaAs

    Journal of Applied Physics, Vol. 73, Núm. 10, pp. 5004-5008

  2. Optically induced recovery by near band gap photons (1.4 eV<hν<1.5 eV) of EL2 level from its metastable state in semi-insulating GaAs

    Journal of Applied Physics, Vol. 73, Núm. 6, pp. 2871-2877

1992

  1. Photocurrent study of the influence of photogenerated carriers on the EL2*-EL2 transformation in semi-insulating GaAs

    Applied Physics Letters, Vol. 60, Núm. 10, pp. 1253-1255

1990

  1. Optically induced excess hole population in semi-insulating GaAs

    Physical Review B, Vol. 42, Núm. 18, pp. 11762-11767

1989

  1. 0.8 eV excitation of the quenched EL2* level in semi-insulating GaAs

    Journal of Applied Physics, Vol. 66, Núm. 5, pp. 2221-2222

  2. Optical excitation of the metastable EL2/emph> level

    Physical Review B, Vol. 39, Núm. 18, pp. 13310-13315

  3. Optical recovery of the 1-1.3 eV photocurrent by 1.45eV photons in semiinsulating GaAs

    Solid State Communications, Vol. 72, Núm. 8, pp. 781-783

1988

  1. Optical quenching of the extrinsic light induced enhanced photocurrent in semi-insulating GaAs

    Japanese Journal of Applied Physics, Vol. 27, Núm. 10 R, pp. 1841-1844

1987

  1. Optically induced long-lifetime photoconductivity in semi-insulating bulk GaAs

    Physical Review B, Vol. 35, Núm. 8, pp. 3832-3842

  2. Photo-Hall study of the optically enhanced photocurrent in semi-insulating LEC GaAs

    Solid State Communications, Vol. 63, Núm. 10, pp. 937-940

1986

  1. Photoconductivity Properties of Vanadium Doped Bulk GaAs

    physica status solidi (a), Vol. 96, Núm. 2, pp. K207-K212

1985

  1. Long lifetime photoconductivity in semi-insulating bulk GaAs

    Solid State Communications, Vol. 55, Núm. 5, pp. 459-462

  2. Optical quenching of the near-intrinsic photocurrent in semi-insulating bulk GaAs

    Journal of Applied Physics, Vol. 57, Núm. 12, pp. 5290-5294

  3. Optically enhanced defect reactions in semi-insulating bulk GaAs

    Journal of Applied Physics, Vol. 57, Núm. 4, pp. 1152-1160

1984

  1. A study on the photoconductivity of a set of horizontal Bridgman semi-insulating GaAs ingots

    Journal of Materials Science, Vol. 19, Núm. 4, pp. 1207-1219

  2. Optical photogenerated traps in semi-insulating GaAs bulk material

    Physica Scripta, Vol. 30, Núm. 3, pp. 198-200

1980

  1. Low field study of P+NN+ or P+PN+ structures in the forward direction

    Solid State Electronics, Vol. 23, Núm. 3, pp. 197-199

1977

  1. Evidence for refilling of recombination centers during thermal stimulation in AgBr

    Journal of Electrostatics, Vol. 3, Núm. 1-3, pp. 133-138