Física de la Materia Condensada, Cristalografía y Mineralogía
Departamento
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University of Montpellier
Montpellier, FranciaPublicaciones en colaboración con investigadores/as de University of Montpellier (20)
2002
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Gradual degradation in 980 nm InGaAs/AlGaAs pump lasers
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
1994
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Temperature dependence of the EL2 metastability in semi-insulating GaAs: Thermal hysteresis between the metastable and reverse transitions
Physical Review B, Vol. 50, Núm. 19, pp. 14112-14118
1993
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A comparison of the thermal and near band-gap light-induced recoveries of EL2 from its metastable state in semiinsulating GaAs
Journal of Applied Physics, Vol. 73, Núm. 10, pp. 5004-5008
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Optically induced recovery by near band gap photons (1.4 eV<hν<1.5 eV) of EL2 level from its metastable state in semi-insulating GaAs
Journal of Applied Physics, Vol. 73, Núm. 6, pp. 2871-2877
1992
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Photocurrent study of the influence of photogenerated carriers on the EL2*-EL2 transformation in semi-insulating GaAs
Applied Physics Letters, Vol. 60, Núm. 10, pp. 1253-1255
1990
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Optically induced excess hole population in semi-insulating GaAs
Physical Review B, Vol. 42, Núm. 18, pp. 11762-11767
1989
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0.8 eV excitation of the quenched EL2* level in semi-insulating GaAs
Journal of Applied Physics, Vol. 66, Núm. 5, pp. 2221-2222
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Optical excitation of the metastable EL2/emph> level
Physical Review B, Vol. 39, Núm. 18, pp. 13310-13315
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Optical recovery of the 1-1.3 eV photocurrent by 1.45eV photons in semiinsulating GaAs
Solid State Communications, Vol. 72, Núm. 8, pp. 781-783
1988
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Optical quenching of the extrinsic light induced enhanced photocurrent in semi-insulating GaAs
Japanese Journal of Applied Physics, Vol. 27, Núm. 10 R, pp. 1841-1844
1987
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Optically induced long-lifetime photoconductivity in semi-insulating bulk GaAs
Physical Review B, Vol. 35, Núm. 8, pp. 3832-3842
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Photo-Hall study of the optically enhanced photocurrent in semi-insulating LEC GaAs
Solid State Communications, Vol. 63, Núm. 10, pp. 937-940
1986
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Photoconductivity Properties of Vanadium Doped Bulk GaAs
physica status solidi (a), Vol. 96, Núm. 2, pp. K207-K212
1985
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Long lifetime photoconductivity in semi-insulating bulk GaAs
Solid State Communications, Vol. 55, Núm. 5, pp. 459-462
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Optical quenching of the near-intrinsic photocurrent in semi-insulating bulk GaAs
Journal of Applied Physics, Vol. 57, Núm. 12, pp. 5290-5294
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Optically enhanced defect reactions in semi-insulating bulk GaAs
Journal of Applied Physics, Vol. 57, Núm. 4, pp. 1152-1160
1984
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A study on the photoconductivity of a set of horizontal Bridgman semi-insulating GaAs ingots
Journal of Materials Science, Vol. 19, Núm. 4, pp. 1207-1219
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Optical photogenerated traps in semi-insulating GaAs bulk material
Physica Scripta, Vol. 30, Núm. 3, pp. 198-200
1980
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Low field study of P+NN+ or P+PN+ structures in the forward direction
Solid State Electronics, Vol. 23, Núm. 3, pp. 197-199
1977
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Evidence for refilling of recombination centers during thermal stimulation in AgBr
Journal of Electrostatics, Vol. 3, Núm. 1-3, pp. 133-138