ESCUELA DE INGENIERIAS INDUSTRIALES
Centro
Royal Institute of Technology
Estocolmo, SueciaPublicacións en colaboración con investigadores/as de Royal Institute of Technology (10)
2019
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Optical and interface properties of direct InP/Si heterojunction formed by corrugated epitaxial lateral overgrowth
Optical Materials Express, Vol. 9, Núm. 3, pp. 1488-1500
2017
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Polarization-Resolved Near-Field Spectroscopy of Localized States in m -Plane InxGa1-x N/Ga N Quantum Wells
Physical Review Applied, Vol. 7, Núm. 6
2015
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Injectable composites of loose microfibers and gelatin with improved interfacial interaction for soft tissue engineering
Polymer, Vol. 74, pp. 224-234
2014
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Defect reduction in heteroepitaxial InP on Si by epitaxial lateral overgrowth
Materials Express, Vol. 4, Núm. 1, pp. 41-53
2010
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Heteroepitaxial growth of indium phosphide from nano-openings made by masking on a Si(001) wafer
Conference Proceedings - International Conference on Indium Phosphide and Related Materials
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Heteroepitaxial indium phosphide on silicon
Proceedings of SPIE - The International Society for Optical Engineering
2006
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Heteroepitaxy and selective epitaxy for discrete and integrated devices
Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
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Heteroepitaxy of InP on silicon-on-insulator for optoelectronic integration
ECS Transactions
2004
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Sulfur doped indium phosphide on silicon substrate grown by epitaxial lateral overgrowth
Conference Proceedings - International Conference on Indium Phosphide and Related Materials
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Sulfur-doped indium phosphide on silicon substrate brown by ELOG
Electrochemical and Solid-State Letters, Vol. 7, Núm. 11