Computing (Architecture and Technology of Computers. Computational Science and Artificial Intelligence. Computing System
Department
Instituto de Microelectrónica de Barcelona
Barcelona, EspañaPublications in collaboration with researchers from Instituto de Microelectrónica de Barcelona (5)
2021
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Influences of the temperature on the electrical properties of HfO2-based resistive switching devices
Electronics (Switzerland), Vol. 10, Núm. 22
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Semiempirical Memdiode Model for Resistive Switching Devices in Dynamic Regimes
Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021
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Study of the set and reset transitions in HfO2-based ReRAM devices using a capacitor discharge
Solid-State Electronics, Vol. 183
2016
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Electrical properties and nanoresistive switching of Ni-HfO2-Si capacitors
ECS Transactions
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Study from cryogenic to high temperatures of the high- and low-resistance-state currents of ReRAM Ni-HfO2-Si capacitors
IEEE Transactions on Electron Devices, Vol. 63, Núm. 5, pp. 1877-1883