Departamento
Electricidad y Electrónica
Aportaciones congreso (13) Publicaciones en las que ha participado algún/a investigador/a
2006
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A Preisach-Stoner-Wohlfarth vector model
INTERMAG 2006 - IEEE International Magnetics Conference
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An in situ transmission electron microscope study of the anomalous annealing of spatially isolated disordered zones in silicon
Journal of Physics: Conference Series
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Analysis of phase transitions in la and Nd substituted YIG with magnetic disaccommodation measurement
Materials Science Forum
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Applying the two-port lumped-network FDTD method to modeling linear field-effect transistors with nonzero transconductance delay parameter
IEEE Antennas and Propagation Society, AP-S International Symposium (Digest)
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Coupling advanced atomistic process and device modeling for optimizing future CMOS devices
International Symposium on VLSI Technology, Systems, and Applications, Proceedings
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Defect concentration in Ti-substituted YIG from TG curves
Journal of Thermal Analysis and Calorimetry
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Design and optimization of nanoCMOS devices using predictive atomistic physics-based process modeling
Technical Digest - International Electron Devices Meeting, IEDM
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Disordered structure and density of gap states in high-permittivity thin solid films
DEFECTS IN HIGH-K GATE DIELECTRIC STACKS: NANO-ELECTRONIC SEMICONDUCTOR DEVICES
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Effect of tetravalent substitutions on the magnetic disaccommodation in magnetite
Physica Status Solidi (C) Current Topics in Solid State Physics
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Electrical defects in atomic layer deposited HfO2 films on silicon: Influence of precursor chemistries and substrate treatment
DEFECTS IN HIGH-K GATE DIELECTRIC STACKS: NANO-ELECTRONIC SEMICONDUCTOR DEVICES
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FDTD Modeling of Double Negative Metamaterials Characterized by High-Order Frequency-Dispersive Constitutive Parameters
IEEE Antennas and Propagation Society, AP-S International Symposium (Digest)
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Fluorine profile distortion upon annealing by the presence of a CVD grown boron box
AIP Conference Proceedings
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Modeling and simulation of the influence of SOI structure on damage evolution and ultra-shallow junction formed by Ge preamorphization implants and solid phase epitaxial regrowth
Materials Research Society Symposium Proceedings