Aportaciones congreso (13) Publicaciones en las que ha participado algún/a investigador/a

2006

  1. A Preisach-Stoner-Wohlfarth vector model

    INTERMAG 2006 - IEEE International Magnetics Conference

  2. An in situ transmission electron microscope study of the anomalous annealing of spatially isolated disordered zones in silicon

    Journal of Physics: Conference Series

  3. Analysis of phase transitions in la and Nd substituted YIG with magnetic disaccommodation measurement

    Materials Science Forum

  4. Applying the two-port lumped-network FDTD method to modeling linear field-effect transistors with nonzero transconductance delay parameter

    IEEE Antennas and Propagation Society, AP-S International Symposium (Digest)

  5. Coupling advanced atomistic process and device modeling for optimizing future CMOS devices

    International Symposium on VLSI Technology, Systems, and Applications, Proceedings

  6. Defect concentration in Ti-substituted YIG from TG curves

    Journal of Thermal Analysis and Calorimetry

  7. Design and optimization of nanoCMOS devices using predictive atomistic physics-based process modeling

    Technical Digest - International Electron Devices Meeting, IEDM

  8. Disordered structure and density of gap states in high-permittivity thin solid films

    DEFECTS IN HIGH-K GATE DIELECTRIC STACKS: NANO-ELECTRONIC SEMICONDUCTOR DEVICES

  9. Effect of tetravalent substitutions on the magnetic disaccommodation in magnetite

    Physica Status Solidi (C) Current Topics in Solid State Physics

  10. Electrical defects in atomic layer deposited HfO2 films on silicon: Influence of precursor chemistries and substrate treatment

    DEFECTS IN HIGH-K GATE DIELECTRIC STACKS: NANO-ELECTRONIC SEMICONDUCTOR DEVICES

  11. FDTD Modeling of Double Negative Metamaterials Characterized by High-Order Frequency-Dispersive Constitutive Parameters

    IEEE Antennas and Propagation Society, AP-S International Symposium (Digest)

  12. Fluorine profile distortion upon annealing by the presence of a CVD grown boron box

    AIP Conference Proceedings

  13. Modeling and simulation of the influence of SOI structure on damage evolution and ultra-shallow junction formed by Ge preamorphization implants and solid phase epitaxial regrowth

    Materials Research Society Symposium Proceedings