ETS INGENIEROS TELECOMUNICACION
Ikastegia
New Jersey Institute of Technology
Newark, Estados UnidosNew Jersey Institute of Technology-ko ikertzaileekin lankidetzan egindako argitalpenak (1)
1998
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Critical issues in ion implantation of silicon below 5 keV: Defects and diffusion
Materials Science and Engineering A, Vol. 253, Núm. 1-2, pp. 269-274