New Jersey Institute of Technology-ko ikertzaileekin lankidetzan egindako argitalpenak (2)

1998

  1. Critical issues in ion implantation of silicon below 5 keV: Defects and diffusion

    Materials Science and Engineering A, Vol. 253, Núm. 1-2, pp. 269-274

1997

  1. B diffusion and clustering in ion implanted Si: The role of B cluster precursors

    Applied Physics Letters, Vol. 70, Núm. 17, pp. 2285-2287