Electrical characterization of low nitrogen content plasma deposited and rapid thermal annealed Al/SiNx:H/InP metal-insulator-semiconductor structures

  1. Castán, H.
  2. Dueñas, S.
  3. Barbolla, J.
  4. Redondo, E.
  5. Mártil, I.
  6. González-Díaz, G.
Aldizkaria:
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

ISSN: 0021-4922

Argitalpen urtea: 2000

Alea: 39

Zenbakia: 11

Orrialdeak: 6212-6215

Mota: Artikulua

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Datuen iturria: Scopus