Lattice damage study of implanted InGaAs by means of Raman spectroscopy

  1. Hernández, S.
  2. Marcos, B.
  3. Cuscó, R.
  4. Blanco, N.
  5. González-Díaz, G.
  6. Artús, L.
Aldizkaria:
Journal of Luminescence

ISSN: 0022-2313

Argitalpen urtea: 2000

Alea: 87

Orrialdeak: 721-723

Mota: Artikulua

DOI: 10.1016/S0022-2313(99)00374-9 GOOGLE SCHOLAR