Interface quality study of ECR-deposited and rapid thermal annealed silicon nitride A1/SiNx:H/InP and A1/SiNx:H/ in0.53Ga0.47As structures by DLTS and conductance transient techniques

  1. Castán, H.
  2. Dueñas, S.
  3. Barbolla, J.
  4. Redondo, E.
  5. Blanco, N.
  6. Mártil, I.
  7. González-Díaz, G.
Journal:
Microelectronics Reliability

ISSN: 0026-2714

Year of publication: 2000

Volume: 40

Issue: 4-5

Pages: 845-848

Type: Article

DOI: 10.1016/S0026-2714(99)00325-X GOOGLE SCHOLAR
Data source: Scopus