Role of deep levels and interface states in the capacitance characteristics of all-sputtered CuInSe2/CdS solar cell heterojunctions

  1. Santamaria, J.
  2. Diaz, G.G.
  3. Iborra, E.
  4. Martil, I.
  5. Sanchez-Quesada, F.
Revue:
Journal of Applied Physics

ISSN: 0021-8979

Année de publication: 1989

Volumen: 65

Número: 8

Pages: 3236-3241

Type: Article

DOI: 10.1063/1.342676 GOOGLE SCHOLAR
La source de données: Scopus