Atomistic study of the anisotropic interaction between extended and point defects in crystalline silicon and its influence on Si self-interstitial diffusion

1. Santos, I.
2. Aboy, M.
3. Marques, L.A.
4. Lopez, P.
5. Ruiz, M.
6. Pelaz, L.
7. Hernandez-Diaz, A.M.
8. Castrillo, P.

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DOI: 10.1109/SISPAD.2016.7605142 GOOGLE SCHOLAR lock_openUVADOC editor

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Related Projects

EXPLORACIÓN MEDIANTE MODELADO DE ESTRATEGIAS DE INGENIERÍA DE DEFECTOS EN ESTRUCTURAS SEMICONDUCTORAS

2014/00426/001

Data source: Scopus