Ion beam induced recrystallization of amorphous silicon: A molecular dynamics study

  1. Marqués, L.A.
  2. Caturla, M.-J.
  3. Díaz De La Rubia, T.
  4. Gilmer, G.H.
Revue:
Journal of Applied Physics

ISSN: 0021-8979

Année de publication: 1996

Volumen: 80

Número: 11

Pages: 6160-6169

Type: Article

DOI: 10.1063/1.363690 GOOGLE SCHOLAR
La source de données: Scopus