Electrical characterization of MOS structures fabricated on SF6 and SF6 + C2CIF5 reactive ion etched silicon

  1. Castán, E.
  2. Vicente, J.
  3. Barbolla, J.
  4. Cabruja, E.
  5. Lora-Tamayo, E.
Aldizkaria:
Nuclear Inst. and Methods in Physics Research, B

ISSN: 0168-583X

Argitalpen urtea: 1993

Alea: 80-81

Zenbakia: PART 2

Orrialdeak: 1362-1366

Mota: Artikulua

DOI: 10.1016/0168-583X(93)90799-C GOOGLE SCHOLAR
Datuen iturria: Scopus