Electrical characterization of MOS structures fabricated on SF6 and SF6 + C2CIF5 reactive ion etched silicon

  1. Castán, E.
  2. Vicente, J.
  3. Barbolla, J.
  4. Cabruja, E.
  5. Lora-Tamayo, E.
Revue:
Nuclear Inst. and Methods in Physics Research, B

ISSN: 0168-583X

Année de publication: 1993

Volumen: 80-81

Número: PART 2

Pages: 1362-1366

Type: Article

DOI: 10.1016/0168-583X(93)90799-C GOOGLE SCHOLAR
La source de données: Scopus