Characterization of the damage induced in boron-implanted and RTA annealed silicon by the capacitance-voltage transient technique

  1. Duenas, S.
  2. Castan, E.
  3. Enriquez, L.
  4. Barbolla, J.
  5. Montserrat, J.
  6. Lora-Tamayo, E.
Aldizkaria:
Semiconductor Science and Technology

ISSN: 0268-1242

Argitalpen urtea: 1994

Alea: 9

Zenbakia: 9

Orrialdeak: 1637-1648

Mota: Artikulua

DOI: 10.1088/0268-1242/9/9/011 GOOGLE SCHOLAR
Datuen iturria: Scopus