Binding energy of vacancy clusters generated by high-energy ion implantation and annealing of silicon

  1. Venezia, V.C.
  2. Pelaz, L.
  3. Gossmann, H.-J.L.
  4. Haynes, T.E.
  5. Rafferty, C.S.
Journal:
Applied Physics Letters

ISSN: 0003-6951

Year of publication: 2001

Volume: 79

Issue: 9

Pages: 1273-1275

Type: Article

DOI: 10.1063/1.1385192 GOOGLE SCHOLAR
Data source: Scopus