Binding energy of vacancy clusters generated by high-energy ion implantation and annealing of silicon

  1. Venezia, V.C.
  2. Pelaz, L.
  3. Gossmann, H.-J.L.
  4. Haynes, T.E.
  5. Rafferty, C.S.
Revue:
Applied Physics Letters

ISSN: 0003-6951

Année de publication: 2001

Volumen: 79

Número: 9

Pages: 1273-1275

Type: Article

DOI: 10.1063/1.1385192 GOOGLE SCHOLAR
La source de données: Scopus