A physics based approach to ultra-shallow p+-junction formation at the 32 nm node

  1. Mokhberi, A.
  2. Pelaz, L.
  3. Aboy, M.
  4. Marques, L.
  5. Barbolla, J.
  6. Paton, E.
  7. McCoy, S.
  8. Ross, J.
  9. Elliott, K.
  10. Gelpey, J.
  11. Griffin, P.B.
  12. Plummer, J.D.
Proceedings:
Technical Digest - International Electron Devices Meeting

ISSN: 0163-1918

Year of publication: 2002

Pages: 879-882

Type: Conference paper