Experimental verification of direct tunneling assisted electron capture of disordered-induced gap states in metal-insulator-semiconductor structures

  1. Castán, H.
  2. Dueñas, S.
  3. Barbolla, J.
Zeitschrift:
Japanese Journal of Applied Physics, Part 2: Letters

ISSN: 0021-4922

Datum der Publikation: 2002

Ausgabe: 41

Nummer: 11 A

Art: Brief

DOI: 10.1143/JJAP.41.L1215 GOOGLE SCHOLAR
Datenquelle: Scopus