Experimental verification of direct tunneling assisted electron capture of disordered-induced gap states in metal-insulator-semiconductor structures

  1. Castán, H.
  2. Dueñas, S.
  3. Barbolla, J.
Journal:
Japanese Journal of Applied Physics, Part 2: Letters

ISSN: 0021-4922

Year of publication: 2002

Volume: 41

Issue: 11 A

Type: Letter

DOI: 10.1143/JJAP.41.L1215 GOOGLE SCHOLAR
Data source: Scopus