Effect of growth temperature and postmetallization annealing on the interface and dielectric quality of atomic layer deposited HfO2 on p and n silicon

  1. Dueñas, S.
  2. Castán, H.
  3. García, H.
  4. Barbolla, J.
  5. Kukli, K.
  6. Aarik, J.
Revue:
Journal of Applied Physics

ISSN: 0021-8979

Année de publication: 2004

Volumen: 96

Número: 3

Pages: 1365-1372

Type: Article

DOI: 10.1063/1.1767622 GOOGLE SCHOLAR

Objectifs de Développement Durable