Influence of single and double deposition temperatures on the interface quality of atomic layer deposited Al2O3 dielectric thin films on silicon

  1. Dueñas, S.
  2. Castán, H.
  3. García, H.
  4. De Castro, A.
  5. Bailón, L.
  6. Kukli, K.
  7. Aidla, A.
  8. Aarik, J.
  9. Mändar, H.
  10. Uustare, T.
  11. Lu, J.
  12. Hårsta, A.
Aldizkaria:
Journal of Applied Physics

ISSN: 0021-8979

Argitalpen urtea: 2006

Alea: 99

Zenbakia: 5

Mota: Artikulua

DOI: 10.1063/1.2177383 GOOGLE SCHOLAR