Atomistic analysis of B clustering and mobility degradation in highly B-doped junctions

  1. Aboy, M.
  2. Pelaz, L.
  3. Ló pez, P.
  4. Bruno, E.
  5. Mirabella, S.
Journal:
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

ISSN: 0894-3370,  1099-1204

Year of publication: 2010

Volume: 23

Issue: 4-5

Pages: 266-284

Type: Conference paper

DOI: 10.1002/JNM.737 GOOGLE SCHOLAR lock_openUVADOC editor

Related Projects

MODELADO Y SIMULACIÓN MULTI-ESCALA DE PROCESOS DE FABRICACIÓN DE DISPOSITIVOS ELECTRÓNICOS NANOMÉTRICOS DE SILICIO

2009/00050/001

Data source: Scopus